SI3454ADV features trenchfet power mosfet 100% r g tested product summary v ds (v) r ds(on) ( ) i d (a) 30 0.060 @ v gs = 10 v 4.5 30 0.085 @ v gs = 4.5 v 3.8 (1, 2, 5, 6) d (3) g (4) s n-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: SI3454ADV-t1 SI3454ADV-t1?e3 (lead free) marking code: a4xxx absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.5 3.4 continuous drain current (t j = 150 c) a t a = 70 c i d 3.6 2.7 a pulsed drain current (10 s pulse width) i dm 20 a continuous source current (diode conduction) a i s 1.7 1.0 maximum power dissipation a t a = 25 c p d 2.0 1.14 w maximum power dissipation a t a = 70 c p d 1.3 0.73 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 50 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 36 c/w notes a. surface mounted on 1? x 1? fr4 board. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 70 c 25 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 15 a drain - source on - state resistance a r ds(on) v gs = 10 v, i d = 4.5 a 0.048 0.060 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 3.8 a 0.070 0.085 forward transconductance a g fs v ds = 10 v, i d = 4.5 a 10 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 9 15 gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 4.5 a 2.5 nc gate-drain charge q gd 1.5 gate resistance r g 0.5 2.9 turn-on delay time t d(on) 10 20 rise time t r v dd = 15 v, r l = 15 10 20 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 20 35 ns fall time t f 7 15 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3454ADV product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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